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中文
Gengqin Liang
Engineer
Working Place: Room 519
Email: lianggengqin@iqasz.cn
Research Direction: Molecular Beam Epitaxy

Personal Biography

I mainly conduct research on III-V group semiconductor materials based on Molecular Beam Epitaxy (MBE) equipment. Daily work involves the operation, maintenance and process development of the equipment, including beam flux and growth rate measurement prior to material growth. The epitaxial wafers are characterized for morphology, roughness and optical properties using equipment such as SEM, AFM and FTIR.

Education Background

2022.09-2025.06     Shenzhen University Optoelectronic Information Engineering       Master’s Degree

2018.09-2022.06     Shenzhen University Optoelectronic Information Science and Engineering Bachelor’s Degree

Working Experience

June 2025 – Present Shenzhen International Quantum Academy   Engineer