Personal Biography

My current responsibilities are centered on the epitaxial growth and testing of III-V compound semiconductors (e.g., GaAs, AlGaAs, InGaAs). During the epitaxial growth phase, I define and optimize key process parameters such as growth temperature, growth rate, and composition ratio to ensure the epitaxial wafers meet experimental specifications. In the testing phase, I employ multidimensional characterization techniques, including SEM, AFM, and XRD, to systematically evaluate the electrical, optical, and surface properties of the materials, thereby ensuring that the quality of the epitaxial wafers complies with device design requirements.

Education Background

2020.09-2023.06    ShenZhen University Physics Master

2016.09-2020.07    East China University of Technology Physics Bachelor

Working Experience

Apr 2024 – Present

Shenzhen International Quantum Academy | Engineer

Jul 2023 – Apr 2024

Focus Photonics .Inc | Engineer

Representative Achievements

1. 谭浩；苏向斌；黄谦睿；刘冰；刘骏秋；黄佳裕。晶圆固定结构，中国，CN222524757U，2025-02-25

2. Jiayu Huang, Haifeng Lin, Chunyu Guo, Jintao Wang, Junbo Yang, Peiguang Yan. Enhanced cascaded up-conversion from periodically poled lithium niobate in a double-pass configuration [J]. Infrared Physics & Technology, 2022, 124.

3. Haifeng Lin, Jiayu Huang, Chunyu Guo, Jintao Wang, Junbo Yang, Peiguang Yan. Generation of high-power multiple-octave supercontinuum from fan-out periodically poled lithium niobate [J]. Journal of Luminescence, 2022, 252.

4. Jiayu Huang, Haifeng Lin, Peiguang Yan. Highly efficient, widely tunable fan-out MgO: PPLN mid-infrared optical parametric oscillator[J]. Infrared and Laser Engineering, 2023, 52(05):114-119.