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中文
Hao Tan
Research Assistant Fellow
Working Place: Room 317
Email: tanhao@iqasz.cn
Research Direction: Molecular beam epitaxy processes and equipment, semiconductor processing techniques and equipment, heterogeneous integration technologies, nonlinear optical materials

Personal Biography

Dr. Tan Hao graduated from Tokyo Institute of Technology with a Ph.D, specializing in the dynamical modeling and spectroscopic research of microwave low-temperature plasma. After that, he returned back to China and has been engaged in molecular beam epitaxy, semiconductor processing technologies, and related equipment, contributing to various quantum information research directions since then. Currently, he serves as a researcher at the precision measurement direction at International Quantum Academy of Shenzhen, and a dual-appointed junior researcher at the National Laboratory of Quantum Information Science in Hefei.

The current primary research focus involves the development of heterogeneously integrated technologies for applications in optical quantum computing and quantum precision measurement. This includes the fabrication of optoelectronic devices and high-quality nonlinear thin-film materials and devices through techniques such as molecular beam epitaxy.

Education Background

2013.04-2016.03  Tokyo Institute of Technology, Institute of Nuclear Engineering, Ph.D

2011.04-2013.03  Master's Degree in Electrical and Electronic Engineering, Utsunomiya University

2006.09-2010.06  Bachelor's Degree, School of Information, Zhejiang University

Working Experience

2022.05-now    International Quantum Academy of Shenzhen Research Fellow

2019.10-2022.04 Beijing Academy of Quantum Sciences Senior Engineer

2017.01-2019.09 University of Science and Technology of China Post-doc

2016.04-2016.12 AMEC Process Engineer

Papers and Patents

JB Long et al., Hybrid-integrated dark-pulse microcombs towards visible light spectrum, arXiv

ZQ Ding et al., High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95 µm. Appl. Phys. Lett. 11 November 2024; 125 (20): 202101.

J Cao et al., High Performance GaSb-Based DBR Laser with On-Chip Integrated Power Amplifier via Gain-Match Design. Appl. Sci. 2025, 15, 41.

Y Cao et al., Room-Temperature van der Waals Perpendicular Ferromagnet Through Interlayer Magnetic Coupling, Phys. Rev. Applied 2022 17, L051001.