Dual Growth Chamber Molecular Beam Epitaxy System

Fourier Transformer Infrared Spectrometer

The research group of the Quantum and Optoelectronic Materials Platform relies on advanced Molecular Beam Epitaxy (MBE) systems and comprehensive optoelectronic property characterization instruments. To meet the national demand for high-performance quantum optoelectronic devices in fields such as quantum communication, quantum sensing, and optoelectronic information systems, the team undertakes major national projects focused on core quantum devices. The research focuses on GaAs/GaSb-based hetero-structured quantum dot and quantum well epitaxial material systems. Key research areas include quantum dot quantum light sources and mid-infrared quantum well lasers. In recent years, we have achieved multiple innovative discoveries and technological breakthroughs, particularly in high-power single-mode antimonide-based lasers and quantum dot single-photon sources. These advancements have been successfully validated in various practical applications, enabling the autonomous and controllable fabrication of core quantum devices.

Looking ahead, the research group will continue to delve deeper into GaAs/GaSb-based semiconductor low-dimensional epitaxial materials and quantum optoelectronic devices, aims to explore component integration and on-chip integration technologies, and develop quantum devices suitable for miniaturized quantum information systems. The goal is to overcome key technical challenges related to efficiency optimization in high-power single-mode optoelectronic devices and on-chip integration miniaturization. By doing so, The group aims to satisfy the growing demand for high-performance, low-cost, and multifunctional quantum optoelectronic devices across emerging application scenarios. Furthermore, The group is committed to continuously enhancing the platform's R&D capabilities and expanding its research scope.