Personal Biography

Jingjing Chen received her Ph.D. from the school of physics at Peking university and is currently an associate researcher and a master’s supervisor at Shenzhen international quantum academy. Her research focuses on the fabrication of micro- and nano-devices based on quantum materials, such as Josephson junctions and low-dimensional superconducting devices. The materials involved include unconventional superconductors, topological insulators, and topological semimetals. She investigates the novel physical properties of these devices using quantum transport techniques under ultra-low temperature and high magnetic field conditions, aiming to explore next-generation devices for the post-Moore era. She has published multiple papers in high-impact journals such as nature communications, nano letters and so on. She is now presiding over one project of the natural science foundation of Guangdong province.

Education Background

2010.09-2015.07 PhD, Peking University

2006.09-2010.07 Bachelor's degree, Xi’an Jiaotong University

Working Experience

Jan. 2025 – present: Associate Researcher, Shenzhen International Quantum Academy

Feb. 2019 – Dec. 2024: Assistant Researcher, Southern University of Science and Technology

Papers and Patents

[1] J. Chen, W. Xu, Z. Tan, Z. Pan, P. Zhu, Z.-M. Liao, and D. Yu, Superconducting Proximity in Intrinsic Magnetic Topological Insulator MnBi₂Te₄–NbN Hybrid Device Modulated by Coulomb Blockade Effect, Nano Lett. 22, 6484 (2022).

[2] C.-G. Chu et al., Broad and colossal edge supercurrent in Dirac semimetal Cd₃As₂ Josephson junctions, Nat. Commun. 14, 6162 (2023).

[3] W.-S. Du et al., Superconducting diode effect and large magnetochiral anisotropy in T_d-MoTe₂ thin film, Phys. Rev. B 110, 174509 (2024).

[4] T. Zhou et al., Superconducting diode effect in the Weyl semimetal T_d -MoTe₂ that has a surface modulated by Al nanoparticles, Nanoscale 17, 5888 (2025).

[5] N. Li, C.-G. Chu, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, Z.-C. Pan, Z.-H. Chen, D.-P. Yu, and Z.-M. Liao, Gate-switchable SQUID based on Dirac semimetal Cd₃As₂ nanowires, Phys. Rev. B 107, 224513 (2023).

[6] Z.-C. Pan, C.-G. Chu, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, W.-Z. Xu, J. Xu, X.-M. Ma, D.-P. Yu, and Z.-M. Liao, Altshuler-Aronov-Spivak interference of one-dimensional helical edge states in MoTe₂, Phys. Rev. B 107, 045411 (2023).

[7] N. Li, Z.-B. Tan, J.-J. Chen, T.-Y. Zhao, C.-G. Chu, A.-Q. Wang, Z.-C. Pan, D. Yu, and Z.-M. Liao, Gate modulation of anisotropic superconductivity in Al–Dirac semimetal Cd₃As₂ nanoplate–Al Josephson junctions, Supercond. Sci. Technol. 35, 044003 (2022).

[8] W.-Z. Xu, C.-G. Chu, Z.-C. Pan, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, P.-F. Zhu, X.-G. Ye, D.-P. Yu, and Z.-M. Liao, Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi₂Te₄, Phys. Rev. B 105, 184515 (2022).

[9] J.-J. Chen, J. Meng, Y.-B. Zhou, H.-C. Wu, Y.-Q. Bie, Z.-M. Liao, and D.-P. Yu, Layer-by-layer assembly of vertically conducting graphene devices, Nat. Commun. 4, 1921 (2013).

[10] J. J. Chen et al., Photovoltaic Effect and Evidence of Carrier Multiplication in Graphene Vertical Homojunctions with Asymmetrical Metal Contacts, ACS Nano 9, 8851 (2015).