Personal Biography

My name is Chen Dongqi and I was born in March 2000. I graduated from Novosibirsk State University in Russia with a postgraduate degree in semiconductor physics. I received a double degree in applied physics and applied Russian during my undergraduate studies.I hold certificates such as Russian as a foreign language Level 2, Russian as a public Level 6, and English Level 6, and I have solid bilingual application skills.

I am familiar with PVD/CVD process and flow design, recipe and MES flow construction, SPC anomaly control and yield optimization, and have participated in a number of third-generation semiconductor SiC wafer development and process transfer projects.

I am currently an engineer in the Xiao Xue Research Group of the National Institute of Technology. I am deeply engaged in the core links of SiGe quantum dot chip process development, Si28 process and NbN resonator preparation, focusing on process step optimization, performance improvement and yield improvement, and proficient in the principle operation of related equipment and cross-team collaboration processes.

I have strong logical thinking, efficient execution and independent learning ability, strong stress resistance, outstanding sense of responsibility, and focus on the field of advanced semiconductor technology research and development.

Education Background

2022.08-2024.07    Novosibirsk State University, Russia   Semiconductor physics   Master's degree

2018.09-2022.06    Heilongjiang University, China   Applied Physics/Applied Russian   Double degree Bachelor

Working Experience

2024.07-2025.04   Changfei Advanced Semiconductor (Wuhan) Co., Ltd Film process engineer

2025.05-至今        Shenzhen International Quantum Academy Engineer